effect of thickness on the structural properties of tellurium film prepared by thermal evaporation

in this research, tellurium (te) film with thicknesses of 100-250 nm were deposited on ceramic substrates by thermal evaporation at 373 k. the thickness of the film was determined by rutherford backscattering spectroscopy. the influence of the thickness on the structural, morphological and molecular bonds was characterized using xrd, scanning electron microscope, and raman spectroscopy. the xrd results confirmed that increasing the thickness, increased the intensity of the peaks, indicating increased crystallinity. sem images indicated that the density of the film and holes in the film decreased as thickness increased. the raman spectrum revealed that the teo2 molecular bond formed on the surface only at room temperature up to 100 nm in thickness; as thickness increased, this bond was observed at 323 k.